Technology for generating an SRAM-based in-memory computing macro includes replacing a SRAM cell cluster defined by a generic SRAM macro with a single-bit multi-bank cluster, the single-bit multi-bank cluster including a plurality of CiM SRAM cells and a plurality of C-2C capacitor ladder cells, arranging a plurality of single-bit multi-bank clusters to form a multi-bit multi-bank cluster, and arranging a plurality of multi-bit multi-bank clusters into a multi-dimensional MAC computational unit within a region of the generic SRAM macro, where an output of at least two of the multi-bit multi-bank clusters are electrically coupled to form an output analog activation line, and where a plurality of bit lines and a plurality of word lines remain at the same grid locations as provided in the generic SRAM macro. Embodiments include arranging a plurality of multi-dimensional MAC computational units into an in-memory MAC computing array.