Invention Application
- Patent Title: MEMORY DEVICE WITH MEMORY STRINGS USING VARIABLE RESISTANCE MEMORY REGIONS
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Application No.: US17877714Application Date: 2022-07-29
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Publication No.: US20220367568A1Publication Date: 2022-11-17
- Inventor: Ryu OGIWARA , Daisaburo TAKASHIMA , Takahiko IIZUKA
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2019-116756 20190624
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00 ; G11C13/00

Abstract:
A memory device includes a memory cell and a first select transistor. The memory cell includes a variable resistance memory region, a first semiconductor layer being in contact with the variable resistance memory region, a first insulating layer being in contact with the first semiconductor layer, and a first voltage application electrode being in contact with the first insulating layer. The first select transistor includes a second semiconductor layer, a second insulating layer being in contact with the second semiconductor layer, and a second voltage application electrode extending in the second direction and being in contact with the second insulating layer.
Information query
IPC分类: