Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
-
Application No.: US17396793Application Date: 2021-08-09
-
Publication No.: US20220367693A1Publication Date: 2022-11-17
- Inventor: Ming-Hua Chang , Po-Wen Su , Chih-Tung Yeh
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202110527145.7 20210514
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/66 ; H01L21/311

Abstract:
A semiconductor structure includes a substrate, a stacked structure on the substrate, an insulating layer on the stacked structure, a passivation layer on the insulating layer, and a contact structure through the passivation layer and the insulating layer and directly contacting the stacked structure. The insulating layer has an extending portion protruding from a sidewall of the passivation layer and adjacent to a surface of the stacked structure directly contacting the contact structure.
Public/Granted literature
- US12218229B2 Semiconductor structure and method for forming the same Public/Granted day:2025-02-04
Information query
IPC分类: