Invention Application
- Patent Title: HIGH-THRESHOLD POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US17762929Application Date: 2021-01-20
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Publication No.: US20220367716A1Publication Date: 2022-11-17
- Inventor: Siyang LIU , Weifeng SUN , Chi ZHANG , Shuxuan XIN , Shen LI , Le QIAN , Chen GE , Longxing SHI
- Applicant: SOUTHEAST UNIVERSITY
- Applicant Address: CN Nanjing
- Assignee: SOUTHEAST UNIVERSITY
- Current Assignee: SOUTHEAST UNIVERSITY
- Current Assignee Address: CN Nanjing
- Priority: CN202011036591.X 20200927
- International Application: PCT/CN2021/072830 WO 20210120
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/812 ; H01L29/778

Abstract:
The present invention discloses a high-threshold power semiconductor device and a manufacturing method thereof. The high-threshold power semiconductor device includes, in sequence from bottom to top: a metal drain electrode, a substrate, a buffer layer, and a drift region; further including: a composite column body which is jointly formed by a drift region protrusion, a columnar p-region and a columnar n-region on the drift region, a channel layer, a passivation layer, a dielectric layer, a heavily doped semiconductor layer, a metal gate electrode and a source metal electrode. The composite column body is formed by sequentially depositing a p-type semiconductor layer and an n-type semiconductor layer on the drift region and then etching same. The channel layer and the passivation layer are formed in sequence by deposition. Thus, the above devices are divided into a cell region and a terminal region. The dielectric layer, the heavily doped semiconductor layer, the metal gate electrode and the source metal electrode only exist in the cell region, and the passivation layer of the terminal region extends upwards and is wrapped outside the channel layer. This structure can increase a threshold voltage of the device, improve the blocking characteristics of the device and reduce the size of a gate capacitance.
Public/Granted literature
- US12107167B2 High-threshold power semiconductor device and manufacturing method thereof Public/Granted day:2024-10-01
Information query
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