Invention Application
- Patent Title: Semiconductor Devices Including Backside Vias and Methods of Forming the Same
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Application No.: US17814132Application Date: 2022-07-21
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Publication No.: US20220367727A1Publication Date: 2022-11-17
- Inventor: Che-Lun Chang , Wei-Yang Lee , Chia-Pin Lin , Yuan-Ching Peng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/06 ; H01L29/423 ; H01L29/417 ; H01L29/45 ; H01L29/78 ; H01L21/02 ; H01L21/285 ; H01L23/528

Abstract:
Semiconductor devices including backside vias with enlarged backside portions and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure in a first device layer; a front-side interconnect structure on a front-side of the first device layer; a first dielectric layer on a backside of the first device layer; a first contact extending through the first dielectric layer to a source/drain region of the first transistor structure; and a backside interconnect structure on a backside of the first dielectric layer and the first contact, the first contact including a first portion having first tapered sidewalls and a second portion having second tapered sidewalls, widths of the first tapered sidewalls narrowing in a direction towards the backside interconnect structure, and widths of the second tapered sidewalls widening in a direction towards the backside interconnect structure.
Public/Granted literature
- US12040407B2 Semiconductor devices including backside vias and methods of forming the same Public/Granted day:2024-07-16
Information query
IPC分类: