Invention Application
- Patent Title: EUV PHOTOMASK
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Application No.: US17875255Application Date: 2022-07-27
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Publication No.: US20220373876A1Publication Date: 2022-11-24
- Inventor: Ching-Huang CHEN , Chi-Yuan SUN , Hua-Tai LIN , Hsin-Chang LEE , Ming-Wei CHEN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/54 ; G03F1/80

Abstract:
A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a photo catalytic layer disposed on the capping layer, and an absorber layer disposed on the photo catalytic layer and carrying circuit patterns having openings. Part of the photo catalytic layer is exposed at the openings of the absorber layer, and the photo catalytic layer includes one selected from the group consisting of titanium oxide (TiO2), tin oxide (SnO), zinc oxide (ZnO) and cadmium sulfide (CdS).
Public/Granted literature
- US11846881B2 EUV photomask Public/Granted day:2023-12-19
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