公开(公告)号：US20240337917A1

公开(公告)日：2024-10-10

申请号：US18745236

申请日：2024-06-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pei-Cheng HSU ,  Ching-Huang CHEN ,  Hung-Yi TSAI ,  Ming-Wei CHEN ,  Hsin-Chang LEE ,  Ta-Cheng LIEN

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

公开(公告)号：US20230350283A1

公开(公告)日：2023-11-02

申请号：US18214348

申请日：2023-06-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Pei-Cheng HSU ,  Ching-Huang CHEN ,  Hung-Yi TSAI ,  Ming-Wei CHEN ,  Hsin-Chang LEE ,  Ta-Cheng LIEN

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

公开(公告)号：US20220373876A1

公开(公告)日：2022-11-24

申请号：US17875255

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ching-Huang CHEN ,  Chi-Yuan SUN ,  Hua-Tai LIN ,  Hsin-Chang LEE ,  Ming-Wei CHEN

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/80

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a photo catalytic layer disposed on the capping layer, and an absorber layer disposed on the photo catalytic layer and carrying circuit patterns having openings. Part of the photo catalytic layer is exposed at the openings of the absorber layer, and the photo catalytic layer includes one selected from the group consisting of titanium oxide (TiO2), tin oxide (SnO), zinc oxide (ZnO) and cadmium sulfide (CdS).

公开(公告)号：US20220113620A1

公开(公告)日：2022-04-14

申请号：US17556681

申请日：2021-12-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Pei-Cheng HSU ,  Ching-Huang CHEN ,  Hung-Yi TSAI ,  Ming-Wei CHEN ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.