Invention Application
- Patent Title: UNIFORM THRESHOLD VOLTAGE NON-PLANAR TRANSISTORS
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Application No.: US17326112Application Date: 2021-05-20
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Publication No.: US20220376069A1Publication Date: 2022-11-24
- Inventor: Hui Zang , Gang Chen
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/146 ; H01L29/66 ; H01L29/78

Abstract:
Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.
Public/Granted literature
- US11588033B2 Uniform threshold voltage non-planar transistors Public/Granted day:2023-02-21
Information query
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