Invention Application
- Patent Title: HIGH ELECTRON MOBILITY TRANSISTORS HAVING IMPROVED PERFORMANCE
-
Application No.: US17325765Application Date: 2021-05-20
-
Publication No.: US20220376099A1Publication Date: 2022-11-24
- Inventor: Kyle Bothe , Joshua Bisges
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/417 ; H01L29/40 ; H01L21/76 ; H01L21/765 ; H01L29/66 ; H03F3/213 ; H03F1/42
Abstract:
A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 Ω/sq.
Public/Granted literature
- US12009417B2 High electron mobility transistors having improved performance Public/Granted day:2024-06-11
Information query
IPC分类:
