Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US17341316Application Date: 2021-06-07
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Publication No.: US20220376166A1Publication Date: 2022-11-24
- Inventor: Chih-Wei Kuo , Chia-Chang Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202110538461.4 20210518
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22 ; H01L43/12

Abstract:
A semiconductor device includes a substrate, a first magnetic tunnel junction (MTJ) structure, a second MTJ structure, and an interconnection structure. The first MTJ structure, the second MTJ structure, and the interconnection structure are disposed on the substrate. The interconnection structure is located between the first MTJ structure and the second MTJ structure in a first horizontal direction, and the interconnection structure includes a first metal interconnection and a second metal interconnection. The second metal interconnection is disposed on and contacts the first metal interconnection. A material composition of the second metal interconnection is different from a material composition of the first metal interconnection.
Public/Granted literature
- US11812667B2 Semiconductor device including magnetic tunnel junction structure Public/Granted day:2023-11-07
Information query
IPC分类: