Invention Application
- Patent Title: NON-VOLATILE MEMORY WITH SPEED CONTROL
-
Application No.: US17329617Application Date: 2021-05-25
-
Publication No.: US20220383956A1Publication Date: 2022-12-01
- Inventor: Xiang Yang , Dengtao Zhao
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Main IPC: G11C16/16
- IPC: G11C16/16 ; G11C16/26 ; G11C16/30 ; G11C16/32 ; G11C16/24
Abstract:
A non-volatile memory system adjusts the speed of a memory operation for a subset of non-volatile memory cells. For example, during a GIDL based erase process, the GIDL generation can be dampened for a subset of memory cells (e.g., for a set of NAND strings, or one or more sub-blocks).
Public/Granted literature
- US11551765B2 Non-volatile memory with speed control Public/Granted day:2023-01-10
Information query
