Invention Application
- Patent Title: CAPACITOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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Application No.: US17359655Application Date: 2021-06-28
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Publication No.: US20220384562A1Publication Date: 2022-12-01
- Inventor: Chih-Tung Yeh , Kuang-Pi Lee , Wen-Jung Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202110598854.4 20210531
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/06

Abstract:
A capacitor structure includes an insulation layer and a capacitor unit disposed on the insulation layer. The capacitor unit includes a first electrode, a second electrode, a first dielectric layer, and a patterned conductive layer. The second electrode is disposed above the first electrode in a vertical direction. The first dielectric layer is disposed between the first electrode and the second electrode in the vertical direction. The patterned conductive layer is disposed between first electrode and the second electrode, the patterned conductive layer is electrically connected with the first electrode, and the first dielectric layer surrounds the patterned conductive layer in a horizontal direction.
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