Invention Application
- Patent Title: Semiconductor Device and Method
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Application No.: US17818647Application Date: 2022-08-09
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Publication No.: US20220384617A1Publication Date: 2022-12-01
- Inventor: Chen-Ping Chen , Kuei-Yu Kao , Shih-Yao Lin , Chih-Han Lin , Ming-Ching Chang , Chao-Cheng Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8234 ; H01L29/78 ; H01L21/8238

Abstract:
A device includes a fin protruding from a semiconductor substrate; a gate stack over and along a sidewall of the fin; a gate spacer along a sidewall of the gate stack and along the sidewall of the fin; an epitaxial source/drain region in the fin and adjacent the gate spacer; and a corner spacer between the gate stack and the gate spacer, wherein the corner spacer extends along the sidewall of the fin, wherein a first region between the gate stack and the sidewall of the fin is free of the corner spacer, wherein a second region between the gate stack and the gate spacer is free of the corner spacer.
Public/Granted literature
- US12294023B2 Method of manufacturing a semiconductor device having corner spacers adjacent a fin sidewall Public/Granted day:2025-05-06
Information query
IPC分类: