Invention Application
- Patent Title: SEMICONDUCTOR DEVICE WITH EPITAXIAL BRIDGE FEATURE AND METHODS OF FORMING THE SAME
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Application No.: US17883234Application Date: 2022-08-08
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Publication No.: US20220384660A1Publication Date: 2022-12-01
- Inventor: Ting-Yeh Chen , Wei-Yang Lee , Chia-Pin Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/06 ; H01L29/423 ; H01L29/45 ; H01L29/66 ; H01L21/02 ; H01L21/285
Abstract:
Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises semiconductor layers over a substrate, wherein the semiconductor layers are stacked up and separated from each other, each semiconductor layer includes a first portion in a first channel region of the substrate and a second portion in a second channel region of the substrate, epitaxial layers formed in a source/drain region between the first channel region and the second channel region, wherein the epitaxial layers are separated from each other and each epitaxial layer is formed between the first portion and the second portion of each semiconductor layer, and a conductive feature wrapping each of the epitaxial layers.
Information query
IPC分类:
