Methods for filling a substrate feature with a seamless metal gate fill are described. Methods comprise sequentially depositing a film on a substrate surface having at least one feature thereon. The at least one feature extends a feature depth from the substrate surface to a bottom surface and has a width defined by a first sidewall and a second sidewall. The film is treated with an oxidizing plasma. Then the film is etched to remove the oxidized film. A second film is deposited to fill the feature, where the second film substantially free of seams and voids.