公开(公告)号：US11776980B2

公开(公告)日：2023-10-03

申请号：US16819023

申请日：2020-03-13

申请人： Applied Materials, Inc.

发明人： Luping Li ,  Jacqueline S. Wrench ,  Wen Ting Chen ,  Yixiong Yang ,  In Seok Hwang ,  Shih Chung Chen ,  Srinivas Gandikota

IPC分类号： H01L27/146 ,  C23C16/20 ,  C23C16/14 ,  C23C16/455 ,  H01L21/67

CPC分类号： H01L27/1463 ,  C23C16/14 ,  C23C16/20 ,  C23C16/45553 ,  H01L27/14629 ,  H01L27/14685 ,  H01L21/67167

摘要： Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

公开(公告)号：US20220389568A1

公开(公告)日：2022-12-08

申请号：US17835463

申请日：2022-06-08

申请人： Applied Materials, Inc.

发明人： Subramanian Tamilmani ,  Srinivas Gandikota ,  Jianqiu Guo ,  Luping Li

IPC分类号： C23C16/04 ,  C23C16/52 ,  C23C16/455 ,  C23C16/30

摘要： Methods for filling a substrate feature with a seamless metal gate fill are described. Methods comprise sequentially depositing a film on a substrate surface having at least one feature thereon. The at least one feature extends a feature depth from the substrate surface to a bottom surface and has a width defined by a first sidewall and a second sidewall. The film is treated with an oxidizing plasma. Then the film is etched to remove the oxidized film. A second film is deposited to fill the feature, where the second film substantially free of seams and voids.

公开(公告)号：US11888045B2

公开(公告)日：2024-01-30

申请号：US17557787

申请日：2021-12-21

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C. H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC分类号： H01L29/51 ,  H01L29/40 ,  H01L29/49

CPC分类号： H01L29/513 ,  H01L29/401 ,  H01L29/4958 ,  H01L29/4966

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20220115516A1

公开(公告)日：2022-04-14

申请号：US17557787

申请日：2021-12-21

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M. Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C.H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC分类号： H01L29/51 ,  H01L29/40 ,  H01L29/49

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20200373404A1

公开(公告)日：2020-11-26

申请号：US16876276

申请日：2020-05-18

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M. Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C.H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC分类号： H01L29/51 ,  H01L29/40

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US11245022B2

公开(公告)日：2022-02-08

申请号：US16876276

申请日：2020-05-18

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M. Bernal Ramos ,  Luping Li ,  Shih Chung Chen ,  Jacqueline S. Wrench ,  Yixiong Yang ,  Steven C. H. Hung ,  Srinivas Gandikota ,  Naomi Yoshida ,  Lin Dong

IPC分类号： H01L29/51 ,  H01L29/40 ,  H01L29/49

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).

公开(公告)号：US20210288086A1

公开(公告)日：2021-09-16

申请号：US16819023

申请日：2020-03-13

申请人： Applied Materials, Inc.

发明人： Luping Li ,  Jacqueline S. Wrench ,  Wen Ting Chen ,  Yixiong Yang ,  In Seok Hwang ,  Shih Chung Chen ,  Srinivas Gandikota

IPC分类号： H01L27/146 ,  C23C16/455 ,  C23C16/20 ,  C23C16/14

摘要： Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

公开(公告)号：US11062900B2

公开(公告)日：2021-07-13

申请号：US16699712

申请日：2019-12-01

申请人： APPLIED MATERIALS, INC.

发明人： Luping Li ,  Shih Chung Chen ,  Kazuya Daito ,  Lin Dong ,  Zhebo Chen ,  Yixiong Yang ,  Steven Hung

IPC分类号： H01L21/02 ,  H01L21/311

摘要： Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.