Invention Application
- Patent Title: DEPOSITION METHOD AND DEPOSITION APPARATUS
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Application No.: US17804373Application Date: 2022-05-27
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Publication No.: US20220389569A1Publication Date: 2022-12-08
- Inventor: Katsumasa YAMAGUCHI , Tsubasa YOKOI
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2021-094460 20210604
- Main IPC: C23C16/14
- IPC: C23C16/14 ; H01L21/285

Abstract:
A deposition method includes preparing a substrate having an insulating film formed thereon, forming a first molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate while the substrate is heated to a first temperature, and forming a second molybdenum film on the first molybdenum film by supplying the molybdenum-containing gas and the reducing gas to the substrate while the substrate is heated to a second temperature that is higher than the first temperature.
Information query
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