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公开(公告)号：US20220389573A1
公开(公告)日：2022-12-08
申请号：US17804174
申请日：2022-05-26
Applicant: Tokyo Electron Limited
Inventor： Katsumasa YAMAGUCHI , Tsubasa YOKOI
Abstract: A deposition method includes preparing a substrate having an insulating film formed thereon; forming a molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate; and heat-treating the substrate having the molybdenum film formed on the insulating film, without exposing the substrate to atmospheric air.
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公开(公告)号：US20220389567A1
公开(公告)日：2022-12-08
申请号：US17664941
申请日：2022-05-25
Applicant: Tokyo Electron Limited
Inventor： Katsumasa YAMAGUCHI , Tsubasa YOKOI
IPC: C23C16/02 , H01L21/285 , C23C16/06 , C23C16/52
Abstract: A film deposition method includes preparing a substrate having an insulating film formed thereon, forming a seed layer on the insulating film, and supplying a molybdenum-containing gas and a reducing gas to the substrate having the seed layer famed thereon, to foam a molybdenum film on the seed layer.
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公开(公告)号：US20230009720A1
公开(公告)日：2023-01-12
申请号：US17857914
申请日：2022-07-05
Applicant: Tokyo Electron Limited
Inventor： Yasuaki KIKUCHI , Tsubasa YOKOI , Tatsuya YAMAGUCHI , Keisuke SUZUKI
IPC: C23C16/06 , H01L21/285 , C23C16/52
Abstract: A method of forming a film is performed in a heat treatment apparatus that includes a processing container, a tubular member provided in the processing container, a heater configured to heat an inside of the processing container, and a gas supply. The method includes: providing a substrate in the tubular member; adjusting a temperature inside the tubular member by the heater; and after adjusting the temperature, supplying a gas containing a film-forming gas from the gas supply into the processing container to form a film on the substrate. In the adjusting the temperature, a gas containing a heat transfer gas is supplied from the gas supply into the processing container.
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公开(公告)号：US20220389569A1
公开(公告)日：2022-12-08
申请号：US17804373
申请日：2022-05-27
Applicant: Tokyo Electron Limited
Inventor： Katsumasa YAMAGUCHI , Tsubasa YOKOI
IPC: C23C16/14 , H01L21/285
Abstract: A deposition method includes preparing a substrate having an insulating film formed thereon, forming a first molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate while the substrate is heated to a first temperature, and forming a second molybdenum film on the first molybdenum film by supplying the molybdenum-containing gas and the reducing gas to the substrate while the substrate is heated to a second temperature that is higher than the first temperature.
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