Invention Application
- Patent Title: METHOD OF ENHANCING CONTRAST WHILE IMAGING HIGH ASPECT RATIO STRUCTURES IN ELECTRON MICROSCOPY
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Application No.: US17770434Application Date: 2020-12-08
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Publication No.: US20220392810A1Publication Date: 2022-12-08
- Inventor: Geetika BAJAJ , Prerna Sonthalia GORADIA , Robert J. VISSER
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Priority: IN202041000949 20200109
- International Application: PCT/US2020/063815 WO 20201208
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01B15/04 ; B05D1/00

Abstract:
The enclosed disclosure relates to a method and apparatus for depositing functionalized nanoparticles within a semiconductor structure in order to create a nano-layer capable of enhancing imaging and contrast, The semiconductor structure can include any type of VNAND structure or 3D structure, The nanoparticles are formed in high-aspect ratio trenches of the structure and form a nano-layer. The functionalized nanoparticles comprise synthesized nanoparticles as well as organic molecules. The organic molecules are chosen to selectively bind to certain nanoparticles and surface materials.
Information query
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