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公开(公告)号:US20200278605A1
公开(公告)日:2020-09-03
申请号:US16290635
申请日:2019-03-01
Applicant: Applied Materials, Inc.
Inventor: Michael Y. YOUNG , Ludovic GODET , Robert J. VISSER
IPC: G03F7/00
Abstract: Methods and apparatus for stamp generation are disclosed using nano-resist and ultra violet blocking materials. In one non-limiting embodiment, a method of producing a copy of a stamp for generating electrical/optical components is disclosed comprising: providing the stamp; coating a bottom surface of the stamp with a ultra violet blocking material; curing the ultra violet blocking material on the bottom surface; contacting the stamp to a target substrate covered with a layer of imprint resist; curing the imprint resist with ultraviolet blocking material during the contacting of the stamp to the target substrate; and releasing the stamp from the target substrate with the cured layer of imprint resist.
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公开(公告)号:US20220057710A1
公开(公告)日:2022-02-24
申请号:US17489551
申请日:2021-09-29
Applicant: Applied Materials, Inc.
Inventor: Michael Y. YOUNG , Ludovic GODET , Robert J. VISSER
IPC: G03F7/00
Abstract: Methods and apparatus for stamp generation are disclosed using nano-resist and ultra violet blocking materials. In one non-limiting embodiment, a method of producing a copy of a stamp for generating electrical/optical components is disclosed comprising: providing the stamp; coating a bottom surface of the stamp with a ultra violet blocking material; curing the ultra violet blocking material on the bottom surface; contacting the stamp to a target substrate covered with a layer of imprint resist; curing the imprint resist with ultraviolet blocking material during the contacting of the stamp to the target substrate; and releasing the stamp from the target substrate with the cured layer of imprint resist.
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3.
公开(公告)号:US20220392810A1
公开(公告)日:2022-12-08
申请号:US17770434
申请日:2020-12-08
Applicant: Applied Materials, Inc.
Inventor: Geetika BAJAJ , Prerna Sonthalia GORADIA , Robert J. VISSER
Abstract: The enclosed disclosure relates to a method and apparatus for depositing functionalized nanoparticles within a semiconductor structure in order to create a nano-layer capable of enhancing imaging and contrast, The semiconductor structure can include any type of VNAND structure or 3D structure, The nanoparticles are formed in high-aspect ratio trenches of the structure and form a nano-layer. The functionalized nanoparticles comprise synthesized nanoparticles as well as organic molecules. The organic molecules are chosen to selectively bind to certain nanoparticles and surface materials.
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