Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US17717756Application Date: 2022-04-11
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Publication No.: US20220392865A1Publication Date: 2022-12-08
- Inventor: Noriko OKUNISHI , Toshiyuki HATA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2021-093167 20210602
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
In order to reduce on-resistance in a semiconductor device to be used for high current applications, the semiconductor device includes a source terminal lead located between a gate terminal lead and a Kelvin terminal lead in plan view and electrically connected with a source terminal via a plurality of wires.
Public/Granted literature
- US12113041B2 Semiconductor device with sense terminal Public/Granted day:2024-10-08
Information query
IPC分类: