- 专利标题: INTERCONNECT STRUCTURE WITH HYBRID BARRIER LAYER
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申请号: US17355566申请日: 2021-06-23
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公开(公告)号: US20220415798A1公开(公告)日: 2022-12-29
- 发明人: Shu-Wei Li , Shin-Yi Yang , Ming-Han Lee , Shau-Lin Shue
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/535
- IPC分类号: H01L23/535 ; H01L21/02 ; H01L21/768
摘要:
The present disclosure relates to an integrated chip including a lower conductive wire within a first dielectric layer over a substrate. A second dielectric layer is over the first dielectric layer. A conductive via is over the lower conductive wire and within the second dielectric layer. A conductive liner layer lines sidewalls of the via. A barrier layer lines sidewalls of the conductive liner layer and lines sidewalls of the second dielectric layer. The conductive liner layer is laterally separated from the second dielectric layer by the barrier layer. The conductive liner layer vertically extends between sidewalls of the barrier layer from a bottom surface of the conductive via to a top surface of the lower conductive wire.
公开/授权文献
- US11652055B2 Interconnect structure with hybrid barrier layer 公开/授权日:2023-05-16
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