- 专利标题: METHOD OF OPERATING SELECTOR DEVICE, METHOD OF OPERATING NONVOLATILE MEMORY APPARATUS APPLYING THE SAME, ELECTRONIC CIRCUIT DEVICE INCLUDING SELECTOR DEVICE, AND NONVOLATILE MEMORY APPARATUS
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申请号: US17855424申请日: 2022-06-30
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公开(公告)号: US20230005537A1公开(公告)日: 2023-01-05
- 发明人: Tae Jung HA , Soo Gil KIM , Jeong Hwan SONG , Tae Joo PARK , Tae Jun SEOK , Hye Rim KIM , Hyun Seung CHOI
- 申请人: SK hynix Inc. , Industry-University Cooperation Foundation Hanyang University ERICA Campus
- 申请人地址: KR Icheon; KR Ansan
- 专利权人: SK hynix Inc.,Industry-University Cooperation Foundation Hanyang University ERICA Campus
- 当前专利权人: SK hynix Inc.,Industry-University Cooperation Foundation Hanyang University ERICA Campus
- 当前专利权人地址: KR Icheon; KR Ansan
- 优先权: KR10-2021-0087022 20210702
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; H01L45/00 ; G11C11/16 ; H01L27/24
摘要:
Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.
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