Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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Application No.: US17385961Application Date: 2021-07-27
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Publication No.: US20230006041A1Publication Date: 2023-01-05
- Inventor: Jing-Wen HUANG , Wei-Hao HUANG , Chung-Yi CHIU , Lung-En KUO , Kun-Yuan LIAO
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Priority: CN202110756407.7 20210705
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/423 ; H01L29/786 ; H01L29/66
Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate and a plurality of nanowires. The substrate has an upper surface. The nanowires are stacked on the upper surface of the substrate along a first direction. The nanowires include a triangle in a cross section, and the nanowires include a plane extending along a second direction, a first down-slant facet on a (111) plane, and a second down-slant facet on an additional (111) plane.
Information query
IPC分类:
