Invention Application
- Patent Title: MIS CAPACITOR AND METHOD OF MAKING A MIS CAPACITOR
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Application No.: US17807869Application Date: 2022-06-21
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Publication No.: US20230006072A1Publication Date: 2023-01-05
- Inventor: Chao Chen , Zhouyi Luo , Feng Cong
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: CN202110740686.8 20210630
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/66 ; H03F3/45

Abstract:
A MIS capacitor and a method of making the same. The capacitor includes a semiconductor substrate having a first part having a first conductivity type and contact regions for coupling the first part to an output node. The substrate has dielectric on a surface of the first part and electrodes on the dielectric. The substrate has a second part having a second conductivity type and a third part having the first conductivity type. The third part is coupleable to a supply voltage. The second part is located between the first part and the third part. The first part and the second part form a first p-n junction and the second part and the third part form a second p-n junction. A reference contact is provided for coupling the second part to a reference voltage. A further contact region is provided for coupling the second part to the output node.
Information query
IPC分类: