- 专利标题: SEMICONDUCTOR DEVICE
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申请号: US17857227申请日: 2022-07-05
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公开(公告)号: US20230011041A1公开(公告)日: 2023-01-12
- 发明人: Soichiro UMEDA , Atsushi KYUTOKU
- 申请人: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2021-115201 20210712
- 主分类号: H01L23/31
- IPC分类号: H01L23/31 ; H01L23/495 ; H01L23/498 ; H01L23/18
摘要:
A semiconductor device includes: an insulating substrate; a first conductor portion and a second conductor portion that are formed on the insulating substrate; a semiconductor element disposed on the first conductor portion; a first terminal having a flat plate-shape that is connected to a first electrode of the semiconductor element; a second terminal having a flat plate-shape that is connected to the first conductor portion; and a sealing resin that seals the insulating substrate, the first conductor portion, the second conductor portion, and the semiconductor element. Each of the first terminal and the second terminal includes: an inner terminal portion disposed inside the sealing resin; and an outer terminal portion disposed in a state of being exposed to an exterior of the sealing resin, and a female thread portion is provided in the outer terminal portion of each of the first terminal and the second terminal.
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