The present application discloses a semi-floating gate memory device, which is a double control gate semi-floating gate memory device with a high-K/metal gate and a silicon oxide/polysilicon gate. A control gate epitaxial silicon layer, a source region and a drain region are formed by an epitaxial growth structure, separate source and drain ion implantation is not needed, the mask required for source and drain ion implantation is saved, and the fabrication cost is low. The present application further discloses a method for fabricating the semi-floating gate memory device.