Invention Publication
- Patent Title: VARACTOR INTEGRATED WITH COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES
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Application No.: US17528391Application Date: 2021-11-17
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Publication No.: US20230154925A1Publication Date: 2023-05-18
- Inventor: Kangguo Cheng , Julien Frougier , Ruilong Xie , JUNTAO LI
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/84
Abstract:
A semiconductor FET (field effect transistor) including a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region and a common metal contact for the first source/drain region and the second source/drain region. The first source/drain region includes a p-type material; and the second source/drain region includes an n-type material.
Public/Granted literature
- US11791342B2 Varactor integrated with complementary metal-oxide semiconductor devices Public/Granted day:2023-10-17
Information query
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