Invention Application
- Patent Title: METHODS AND SYSTEMS FOR FORMING A LAYER COMPRISING A TRANSITIONAL METAL AND A GROUP 13 ELEMENT
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Application No.: US17812488Application Date: 2022-07-14
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Publication No.: US20230015690A1Publication Date: 2023-01-19
- Inventor: Maart van Druenen , Qi Xie , Charles Dezelah , Petro Deminskyi , Lifu Chen , Giuseppe Alessio Verni , Ren-Jie Chang
- Applicant: ASM IP Holding, B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding, B.V.
- Current Assignee: ASM IP Holding, B.V.
- Current Assignee Address: NL Almere
- Main IPC: C23C16/14
- IPC: C23C16/14 ; C23C16/18 ; C23C16/44
Abstract:
Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.
Public/Granted literature
- US12031206B2 Methods and systems for forming a layer comprising a transitional metal and a group 13 element Public/Granted day:2024-07-09
Information query
IPC分类:
