公开(公告)号：US12031206B2

公开(公告)日：2024-07-09

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

CPC classification number: C23C16/14 ,  C23C16/18 ,  C23C16/4408

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20220189775A1

公开(公告)日：2022-06-16

申请号：US17546186

申请日：2021-12-09

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  C23C16/32

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US12159788B2

公开(公告)日：2024-12-03

申请号：US17546186

申请日：2021-12-09

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20230015690A1

公开(公告)日：2023-01-19

申请号：US17812488

申请日：2022-07-14

Applicant: ASM IP Holding, B.V.

Inventor： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC: C23C16/14 ,  C23C16/18 ,  C23C16/44

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US11873557B2

公开(公告)日：2024-01-16

申请号：US17504839

申请日：2021-10-19

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45534 ,  C23C16/45553 ,  C23C16/52

Abstract: The manufacture of semiconductor devices may include methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate.

公开(公告)号：US20220127724A1

公开(公告)日：2022-04-28

申请号：US17504839

申请日：2021-10-19

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/455 ,  C23C16/52

Abstract: The current disclosure relates to the manufacture of semiconductor devices, specifically to methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate. The disclosure further relates to structures and devices formed by the methods, as well as to a deposition assembly.

公开(公告)号：US20250062128A1

公开(公告)日：2025-02-20

申请号：US18922849

申请日：2024-10-22

Applicant: ASM IP Holding B.V.

Inventor： Maart van Druenen ,  Charles Dezelah ,  Qi Xie ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Lifu Chen

IPC: H01L21/28 ,  C23C16/32 ,  H01L29/40 ,  H01L29/49

Abstract: Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.

公开(公告)号：US20240093363A1

公开(公告)日：2024-03-21

申请号：US18522778

申请日：2023-11-29

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45534 ,  C23C16/45553 ,  C23C16/52

Abstract: The current disclosure relates to the manufacture of semiconductor devices, specifically to methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate. The disclosure further relates to structures and devices formed by the methods, as well as to a deposition assembly.

公开(公告)号：US20220285147A1

公开(公告)日：2022-09-08

申请号：US17685525

申请日：2022-03-03

Applicant: ASM IP Holding B.V.

Inventor： Lifu Chen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Giuseppe Alessio Verni ,  Petri Raisanen ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/08

Abstract: Disclosed are methods and systems for depositing layers comprising a titanium, aluminum, and carbon. The layers are formed onto a surface of a substrate. The deposition process comprises a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20220165575A1

公开(公告)日：2022-05-26

申请号：US17529562

申请日：2021-11-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens ,  Eric Shero ,  Jiyeon Kim ,  Charles Dezelah ,  Petro Deminskyi ,  Ren-Jie Chang

IPC: H01L21/28 ,  H01L21/02 ,  C23C16/52 ,  C23C16/455

Abstract: Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate.