公开(公告)号：US20230015690A1

公开(公告)日：2023-01-19

申请号：US17812488

申请日：2022-07-14

申请人： ASM IP Holding, B.V.

发明人： Maart van Druenen ,  Qi Xie ,  Charles Dezelah ,  Petro Deminskyi ,  Lifu Chen ,  Giuseppe Alessio Verni ,  Ren-Jie Chang

IPC分类号： C23C16/14 ,  C23C16/18 ,  C23C16/44

摘要： Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20220165575A1

公开(公告)日：2022-05-26

申请号：US17529562

申请日：2021-11-18

申请人： ASM IP Holding B.V.

发明人： Qi Xie ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens ,  Eric Shero ,  Jiyeon Kim ,  Charles Dezelah ,  Petro Deminskyi ,  Ren-Jie Chang

IPC分类号： H01L21/28 ,  H01L21/02 ,  C23C16/52 ,  C23C16/455

摘要： Methods and systems for depositing threshold voltage shifting layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a threshold voltage shifting layer onto a surface of the substrate.

公开(公告)号：US20230101229A1

公开(公告)日：2023-03-30

申请号：US17953585

申请日：2022-09-27

申请人： ASM IP Holding B.V.

发明人： Hannu Huotari ,  Viljami Pore ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Michael Givens ,  Eric James Shero

IPC分类号： H01L21/768 ,  H01L21/67 ,  H01L21/02

摘要： A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

公开(公告)号：US20210332476A1

公开(公告)日：2021-10-28

申请号：US17113301

申请日：2020-12-07

申请人： ASM IP Holding B.V.

发明人： Pia Homm Jara ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed ,  Panagiota Arnou ,  Ren-Jie Chang ,  Qi Xie ,  Giuseppe Alessio Verni ,  Gido van der Star

IPC分类号： C23C16/34 ,  H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/04 ,  C23C16/56

摘要： The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

公开(公告)号：US20220285211A1

公开(公告)日：2022-09-08

申请号：US17680711

申请日：2022-02-25

申请人： ASM IP Holding B.V.

发明人： Elina Färm ,  Shinya Iwashita ,  Charles Dezelah ,  Jan Willem Maes ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC分类号： H01L21/768 ,  H01L21/02 ,  C23C16/455

摘要： Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220102163A1

公开(公告)日：2022-03-31

申请号：US17484144

申请日：2021-09-24

申请人： ASM IP Holding B.V.

发明人： Ren-Jie Chang ,  Giuseppe Alessio Verni ,  Qi Xie

IPC分类号： H01L21/3213 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56

摘要： Devices and methods for selectively etching a metal nitride layer are disclosed. The methods comprise an oxidation step and an etching step which are optionally separated by a purge, and which can be repeated in a cyclical etching process.

公开(公告)号：US20230095086A1

公开(公告)日：2023-03-30

申请号：US17953803

申请日：2022-09-27

申请人： ASM IP Holding B.V.

发明人： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Charles Dezelah ,  Qi Xie ,  Viljami Pore

IPC分类号： H01L21/285

摘要： Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a gap filling process by means of a plasma-enhanced deposition process. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220293463A1

公开(公告)日：2022-09-15

申请号：US17680607

申请日：2022-02-25

申请人： ASM IP Holding B.V.

发明人： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC分类号： H01L21/768 ,  H01L21/02

摘要： Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220285146A1

公开(公告)日：2022-09-08

申请号：US17680761

申请日：2022-02-25

申请人： ASM IP Holding B.V.

发明人： Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Qi Xie ,  Timothee Blanquart ,  Eric Shero

IPC分类号： H01L21/02 ,  H01L27/108

摘要： Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20220282374A1

公开(公告)日：2022-09-08

申请号：US17680903

申请日：2022-02-25

申请人： ASM IP Holding B.V.

发明人： Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Qi Xie ,  Charles Dezelah

IPC分类号： C23C16/455

摘要： Disclosed are methods and systems for depositing layers comprising vanadium and oxygen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.