- 专利标题: MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD
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申请号: US18156734申请日: 2023-01-19
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公开(公告)号: US20230157034A1公开(公告)日: 2023-05-18
- 发明人: Meng-Han LIN , Sai-Hooi YEONG , Han-Jong CHIA , Chenchen Jacob WANG , Yu-Ming LIN
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H10B63/00
- IPC分类号: H10B63/00 ; G11C13/00 ; H10N70/20 ; H10N70/00
摘要:
A memory device includes a bit line, a word line, a memory cell, select bit lines, and a controller. The memory cell includes a first transistor, data storage elements, and second transistors corresponding to the data storage elements. The first transistor includes a gate electrically coupled to the word line, a first source/drain, and a second source/drain. Each of the select bit lines is electrically coupled to a gate of a corresponding second transistor. Each data storage element and the corresponding second transistor are electrically coupled in series between the first source/drain of the first transistor and the bit line. The controller turns ON the first transistor and a selected second transistor, and, while the first transistor and the selected second transistor are turned ON, applies different voltages to the bit line to perform corresponding different operations on the data storage element coupled to the selected second transistor.
公开/授权文献
- US11864393B2 Memory device, integrated circuit device and method 公开/授权日:2024-01-02
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