-
公开(公告)号：US20240021465A1
公开(公告)日：2024-01-18
申请号：US18359412
申请日：2023-07-26
发明人： Sai-Hooi YEONG , Yen-Chieh HUANG
IPC分类号： H01L21/764 , H01L29/78 , H01L29/06 , H01L29/66 , H01L29/08
CPC分类号： H01L21/764 , H01L29/7851 , H01L29/0649 , H01L29/66795 , H01L29/6653 , H01L29/6656 , H01L29/0847
摘要： A semiconductor structure is provided. The semiconductor structure includes a first fin and a second fin on a semiconductor substrate. The semiconductor structure also includes an epitaxial structure on the first fin and the second fin. The semiconductor structure further includes outer spacers on outer sidewalls of the epitaxial structure. In addition, the semiconductor structure includes an inner spacer structure between the first fin and the second fin and covering inner sidewalls of the epitaxial structure. A top surface of the inner spacer structure is exposed to an air gap formed between the epitaxial structure and the inner spacer structure.
-
公开(公告)号：US20230402543A1
公开(公告)日：2023-12-14
申请号：US18360471
申请日：2023-07-27
发明人： Sai-Hooi YEONG , Chi-On CHUI , Chien-Ning YAO
IPC分类号： H01L29/78 , H01L21/28 , H01L29/66 , H01L21/8234 , H01L29/06 , H01L29/417
CPC分类号： H01L29/78391 , H01L29/40111 , H01L29/6684 , H01L29/41791 , H01L29/66795 , H01L29/7851 , H01L29/0665 , H01L21/823431
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a transistor which includes a source/drain feature adjoining an active region, and a gate stack over the active region. The semiconductor device structure further includes a capacitor above the transistor, the capacitor including a bottom electrode layer on the gate stack and a ferroelectric layer on the bottom electrode layer. The ferroelectric layer is made of a Hf-based dielectric material. The semiconductor device structure further includes gate spacer layers surrounding the gate stack, the bottom electrode layer and the ferroelectric layer.
-
公开(公告)号：US20210376154A1
公开(公告)日：2021-12-02
申请号：US17185549
申请日：2021-02-25
发明人： Meng-Han LIN , Chia-En HUANG , Han-Jong CHIA , Martin LIU , Sai-Hooi YEONG , Yih WANG
IPC分类号： H01L29/78 , G11C11/22 , H01L27/1159 , H01L29/66
摘要： A ferroelectric field-effect transistor (FeFET) configured as a multi-bit storage device, the FeFET including: a semiconductor substrate that has a source region in the semiconductor substrate, and a drain region in the semiconductor substrate; a gate stack over the semiconductor substrate, with the source region and the drain region extending to opposite sides of the gate stack, the gate stack including a ferroelectric layer over the semiconductor substrate, and a gate region over the ferroelectric layer. The transistor also includes first and second ends of the ferroelectric layer which are proximal correspondingly to the source and drain regions. The ferroelectric layer includes dipoles. A first set of dipoles at the first end of the ferroelectric layer has a first polarization. A second set of dipoles at the second end of the ferroelectric layer has a second polarization, the second polarization being substantially opposite of the first polarization.
-
公开(公告)号：US20210366779A1
公开(公告)日：2021-11-25
申请号：US17397547
申请日：2021-08-09
发明人： Jui-Yao LAI , Ru-Gun LIU , Sai-Hooi YEONG , Yen-Ming CHEN , Yung-Sung YEN , Ying-Yan CHEN
IPC分类号： H01L21/8234 , H01L29/78 , H01L29/417 , H01L21/768 , H01L29/66 , H01L23/535 , H01L29/06 , H01L29/423
摘要： A semiconductor device includes a first gate structure, a second gate structure, a first source/drain structure and a second source/drain structure. The first gate structure includes a first gate electrode and a first cap insulating layer disposed on the first gate electrode. The second gate structure includes a second gate electrode and a first conductive contact layer disposed on the first gate electrode. The first source/drain structure includes a first source/drain conductive layer and a second cap insulating layer disposed over the first source/drain conductive layer. The second source/drain structure includes a second source/drain conductive layer and a second conductive contact layer disposed over the second source/drain conductive layer.
-
公开(公告)号：US20240055049A1
公开(公告)日：2024-02-15
申请号：US18492964
申请日：2023-10-24
发明人： Han-Jong CHIA , Sai-Hooi YEONG , Yu-Ming LIN
CPC分类号： G11C14/0072 , G11C11/221 , G11C11/2259 , G11C11/2275 , G11C11/419 , G11C11/223 , H10B10/12 , H10B51/30 , H10B53/30
摘要： Memories are provided. A memory includes a plurality of ferroelectric random access memory (FRAM) cells arranged in a first memory array, a plurality of static random access memory (SRAM) cells arranged in a second memory array, and a controller configured to access the first memory array and the second memory array with different access rate. Each of the FRAM cells includes a ferroelectric field-effect transistor (FeFET). A gate structure of the FeFET includes a gate electrode over a channel of the FeFET, a ferroelectric layer over the gate electrode, a first electrode over the gate electrode, and a second electrode over the first electrode. The ferroelectric layer is formed between the first and second electrodes.
-
公开(公告)号：US20230230921A1
公开(公告)日：2023-07-20
申请号：US17577996
申请日：2022-01-18
发明人： Meng-Han LIN , Bo-Feng YOUNG , Han-Jong CHIA , Sai-Hooi YEONG
IPC分类号： H01L23/528 , H01L27/11519 , H01L29/417 , H01L29/786 , H01L29/66 , H01L27/11556 , H01L27/11524 , H01L27/11565 , H01L27/1157 , H01L27/11582 , H01L27/11587 , H01L27/1159 , H01L27/11597
CPC分类号： H01L23/5283 , H01L27/11519 , H01L29/41733 , H01L29/78618 , H01L29/66742 , H01L27/11556 , H01L27/11524 , H01L27/11565 , H01L27/1157 , H01L27/11582 , H01L27/11587 , H01L27/1159 , H01L27/11597
摘要： A semiconductor device includes a semiconductor substrate, first and second stack units disposed over the semiconductor substrate, and a feature disposed between the first and second stack units. Each of the first and second stack units includes at least one stack that includes a conductive film and a dielectric film stacked on each other. The feature includes a plurality of repeating units and a plurality of separators disposed to alternate with the repeating units. Each of the repeating units includes an inner portion including a pair of conductive pillars, and an outer portion including a memory film and a channel film. A method for manufacturing the semiconductor device is also disclosed.
-
公开(公告)号：US20230157034A1
公开(公告)日：2023-05-18
申请号：US18156734
申请日：2023-01-19
CPC分类号： H10B63/30 , G11C13/0007 , G11C13/003 , G11C13/0097 , H10B63/845 , H10N70/24 , H10N70/066 , G11C2213/79
摘要： A memory device includes a bit line, a word line, a memory cell, select bit lines, and a controller. The memory cell includes a first transistor, data storage elements, and second transistors corresponding to the data storage elements. The first transistor includes a gate electrically coupled to the word line, a first source/drain, and a second source/drain. Each of the select bit lines is electrically coupled to a gate of a corresponding second transistor. Each data storage element and the corresponding second transistor are electrically coupled in series between the first source/drain of the first transistor and the bit line. The controller turns ON the first transistor and a selected second transistor, and, while the first transistor and the selected second transistor are turned ON, applies different voltages to the bit line to perform corresponding different operations on the data storage element coupled to the selected second transistor.
-
公开(公告)号：US20220367724A1
公开(公告)日：2022-11-17
申请号：US17874008
申请日：2022-07-26
发明人： Bo-Feng YOUNG , Chih-Yu CHANG , Sai-Hooi YEONG , Chi-On CHUI , Chih-Hao WANG
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a fin structure that includes a first negative capacitance material, and an isolation structure formed over the substrate. The semiconductor device structure includes a gate structure formed over the fin structure, and a source feature and a drain feature formed over the fin structure. An interface between the fin structure and the source feature is lower than a top surface of the isolation structure.
-
公开(公告)号：US20220328344A1
公开(公告)日：2022-10-13
申请号：US17225437
申请日：2021-04-08
发明人： Chia-Ta YU , Kai-Hsuan LEE , Sai-Hooi YEONG , Yen-Chieh HUANG , Feng-Cheng YANG
IPC分类号： H01L21/768 , H01L29/78 , H01L29/08 , H01L29/45 , H01L23/532 , H01L23/535 , H01L21/285 , H01L29/66
摘要： A semiconductor structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The structure also includes an inter-layer dielectric (ILD) structure formed over the gate structure. The structure also includes a contact blocking structure formed through the ILD structure over the source/drain epitaxial structure. A lower portion of the contact blocking structure is surrounded by an air gap, and the air gap is covered by a portion of the ILD structure.
-
公开(公告)号：US20220238647A1
公开(公告)日：2022-07-28
申请号：US17161017
申请日：2021-01-28
发明人： Sai-Hooi YEONG , Bo-Feng YOUNG , Ching-Wei TSAI
IPC分类号： H01L29/06 , H01L29/78 , H01L29/417 , H01L29/423 , H01L27/088 , H01L29/40 , H01L29/66 , H01L29/786 , H01L21/8234
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first nanostructure over the substrate. The semiconductor device structure includes a gate stack over the substrate and surrounding the first nanostructure. The semiconductor device structure includes a first source/drain layer surrounding the first nanostructure and adjacent to the gate stack. The semiconductor device structure includes a contact structure surrounding the first source/drain layer, wherein a first portion of the contact structure is between the first source/drain layer and the substrate.
-
-
-
-
-
-
-
-
-
搜索结果
47 条记录 (耗时 0.023 秒)
