A plasma etching method is disclosed. The plasma etching method comprises: a first step of vaporizing liquid perfluoroisopropyl vinylether (PIPVE); a second step of supplying, to a plasma chamber in which an object to be etched is arranged, the vaporized PIPVE and a discharge gas comprising argon gas; and a third step of discharging the discharge gas so as to generate plasma, and using same so as to plasma-etch the object to be etched.