Invention Publication
- Patent Title: Dummy Hybrid Film for Self-Alignment Contact Formation
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Application No.: US17648037Application Date: 2022-01-14
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Publication No.: US20230163194A1Publication Date: 2023-05-25
- Inventor: Bor Chiuan Hsieh , Tsai-Jung Ho , Po-Cheng Shih , Tze-Liang Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/40

Abstract:
A method includes forming a dummy gate stack over a semiconductor region, forming gate spacers on opposing sides of the dummy gate stack, forming a source/drain region on a side of the dummy gate stack, forming an inter-layer dielectric over the source/drain region, replacing the dummy gate stack with a replacement gate stack, recessing the replacement gate stack to form a recess between the gate spacers, depositing a liner extending into the recess, depositing a masking layer over the liner and extending into the recess, forming an etching mask covering a portion of the masking layer, and etching the inter-layer dielectric to form a source/drain contact opening. The source/drain region is underlying and exposed to the source/drain contact opening. A source/drain contact plug is formed in the source/drain contact opening. A gate contact plug extends between the gate spacers and electrically connecting to the replacement gate stack.
Public/Granted literature
- US12302595B2 Dummy hybrid film for self-alignment contact formation Public/Granted day:2025-05-13
Information query
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