Invention Application
- Patent Title: POWER ARCHITECTURE FOR NON-VOLATILE MEMORY
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Application No.: US17873850Application Date: 2022-07-26
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Publication No.: US20230017388A1Publication Date: 2023-01-19
- Inventor: Qisong Lin , Shuai Xu , Jonathan S. Parry , Jeremy Binfet , Micheie Piccardi , Qing Liang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G06F3/06 ; G06F12/0875 ; G11C16/10

Abstract:
Methods, systems, and devices for power architecture for non-volatile memory are described. A memory device may be configured to operate in a first mode and a second mode (e.g., a low power mode). When operating in the first mode, a voltage may be supplied from a power source (e.g., a power management integrated circuit) to a memory array and one or more associated components via a regulator. When the memory device transitions to operate in the second mode, some of the components supplied from the power source may be powered by a charge pump. Control information associated with the memory array may be stored to the one or more components (e.g., to a cache) that are powered by a charge pump.
Public/Granted literature
- US11763895B2 Power architecture for non-volatile memory Public/Granted day:2023-09-19
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