Invention Publication
- Patent Title: HIGH-BANDWIDTH MEMORY MODULE ARCHITECTURE
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Application No.: US17849089Application Date: 2022-06-24
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Publication No.: US20230178121A1Publication Date: 2023-06-08
- Inventor: Aaron John Nygren
- Applicant: Advanced Micro Devices, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22

Abstract:
A high-bandwidth dual-inline memory module (HB-DIMM) includes a plurality of memory chips, a plurality of data buffer chips, and a register clock driver (RCD) circuit. The data buffer chips are coupled to respective sets of the memory chips and transmit data from the memory chips over a host bus at a data rate twice that of the memory chips. The RCD circuit includes a host bus interface and a memory interface coupled to the plurality of memory chips. The RCD circuit implements commands received over the host bus by routing command/address (C/A) signals to the memory chips for providing at least two independently addressable pseudo-channels, the RCD circuit addressing each respective pseudo-channel based on a chip identifier (CID) bit derived from the C/A signals.
Public/Granted literature
- US12300346B2 High-bandwidth memory module architecture Public/Granted day:2025-05-13
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