Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US17954859Application Date: 2022-09-28
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Publication No.: US20230178646A1Publication Date: 2023-06-08
- Inventor: Yu NAGAHAMA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP 21197291 2021.12.03
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/40 ; H01L29/417 ; H01L29/66
Abstract:
A plurality of first trenches is formed in a cell region and a second trench is formed in an outer peripheral region. A gate electrode and a first field plate electrode are formed in each of the plurality of first trenches, and a second field plate electrode is formed in the second trench. For example, in a drift region formed in the outer peripheral region, a p-type column region is formed in a portion sandwiched, in a Y direction, by a portion, which is located between two of the plurality of first trenches arranged next to each other, and the second trench.
Information query
IPC分类:
