Discussed is a semiconductor light emitting device that can include a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, a first pad electrode electrically connected to the first conductivity type semiconductor layer, a second pad electrode electrically connected to the second conductivity type semiconductor layer, a first pattern structure disposed on the first pad electrode, and a second pattern structure disposed on the second pad electrode, wherein the first pattern structure comprises a first metal pattern structure disposed on the first pad electrode, a first adhesive material disposed on the first metal pattern structure, and a first conductive particle disposed in the first metal pattern structure.