Invention Publication
- Patent Title: VARIABLE RESISTANCE MEMORY DEVICE
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Application No.: US18071740Application Date: 2022-11-30
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Publication No.: US20230180641A1Publication Date: 2023-06-08
- Inventor: Zhe WU , Taeguen KIM , Jeonghee PARK , Taehyeong KIM , Minji YU
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Korea University Research And Business Foundation
- Current Assignee: Korea University Research And Business Foundation
- Current Assignee Address: KR Seoul
- Priority: KR 20210171195 2021.12.02
- Main IPC: H10N70/20
- IPC: H10N70/20 ; H10N70/00 ; H10B63/00 ; G11C13/00

Abstract:
A variable resistance memory device includes a substrate, a first conductive line on the substrate, the first conductive line extending in a first horizontal direction, a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizontal direction, and a memory cell at an intersection between the first conductive line and the second conductive line, the memory cell having a selection element layer, an intermediate electrode layer, and a variable resistance layer, and the variable resistance layer having a shape of stairs with a concave center.
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