Invention Publication
- Patent Title: SEMICONDUCTOR LIGHT DETECTION ELEMENT
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Application No.: US17925409Application Date: 2021-05-17
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Publication No.: US20230187462A1Publication Date: 2023-06-15
- Inventor: Yoshinori TSUKADA , Kohei KASAMORI , Masaki HIROSE , Yoshihisa WARASHINA
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Priority: JP 20097598 2020.06.04
- International Application: PCT/JP2021/018677 2021.05.17
- Date entered country: 2022-11-15
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A photodetection element includes a semiconductor substrate having a principal surface on which detection target light is incident and a rear surface, and including one or a plurality of photodetection regions on the principal surface side, and a light absorption film provided on the rear surface. The light absorption film includes a reflection layer being a metal layer, a resonance layer provided between the reflection layer and the substrate, and a light absorption layer provided between the resonance layer and the substrate. In at least one of a wavelength of the detection target light and a wavelength of spontaneous light, a light transmittance inside the resonance layer is larger than a light transmittance inside the light absorption layer, and a light reflectance on a surface of the reflection layer is larger than a light reflectance on a surface of the resonance layer.
Information query
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