A phase change memory (PCM) device is provided. The PCM device includes a bottom electrode formed on a substrate, a heater electrode formed on the bottom electrode, the heater electrode having a tapered portion that becomes narrower in a direction away from the substrate. The PCM device also includes an interlayer dielectric (ILD) layer formed on the tapered portion of the heater electrode, the interlayer layer dielectric including an airgap that at least partially surrounds the tapered portion of the heater electrode. The PCM device also includes a phase change layer formed on the heater electrode, and a top electrode formed on the phase change layer.