Invention Publication
- Patent Title: ION COLLECTOR FOR USE IN PLASMA SYSTEMS
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Application No.: US18168362Application Date: 2023-02-13
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Publication No.: US20230197424A1Publication Date: 2023-06-22
- Inventor: Otto CHEN , Chi-Ying WU , Chia-Chih CHEN
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- The original application number of the division: US16704858 2019.12.05
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01J37/244

Abstract:
An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.
Public/Granted literature
- US11996276B2 Ion collector for use in plasma systems Public/Granted day:2024-05-28
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