公开(公告)号：US20240290588A1

公开(公告)日：2024-08-29

申请号：US18654822

申请日：2024-05-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Otto CHEN ,  Chi-Ying WU ,  Chia-Chih CHEN

IPC分类号： H01J37/32 ,  H01J37/244

CPC分类号： H01J37/32935 ,  H01J37/244 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32449 ,  H01J37/3266 ,  H01J2237/24405 ,  H01J2237/24465 ,  H01J2237/24507 ,  H01J2237/24564

摘要： An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

公开(公告)号：US20230197424A1

公开(公告)日：2023-06-22

申请号：US18168362

申请日：2023-02-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Otto CHEN ,  Chi-Ying WU ,  Chia-Chih CHEN

IPC分类号： H01J37/32 ,  H01J37/244

CPC分类号： H01J37/32935 ,  H01J37/32155 ,  H01J37/32146 ,  H01J37/32449 ,  H01J37/244 ,  H01J37/3266 ,  H01J2237/24465 ,  H01J2237/24564 ,  H01J2237/24405 ,  H01J2237/24507

摘要： An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

公开(公告)号：US20200020544A1

公开(公告)日：2020-01-16

申请号：US16035159

申请日：2018-07-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： I-Ming CHANG ,  Chih-Cheng LIN ,  Chi-Ying WU ,  Wei-Ming YOU ,  Ziwei FANG ,  Huang-Lin CHAO

IPC分类号： H01L21/322 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L29/165

摘要： A method for forming a semiconductor device structure is provided. The method includes depositing a gate dielectric layer over a substrate. The substrate has a base portion and a first fin portion over the base portion, and the gate dielectric layer is over the first fin portion. The method includes forming a gate electrode layer over the gate dielectric layer. The gate electrode layer includes fluorine. The method includes annealing the gate electrode layer and the gate dielectric layer so that fluorine from the gate electrode layer diffuses into the gate dielectric layer.