A nitride semiconductor light-emitting element includes a first n-side semiconductor layer, a first active layer located on the first n-side semiconductor layer, a first p-side semiconductor layer located on the first active layer, a second n-side semiconductor layer located on the first p-side semiconductor layer, a second active layer located on the second n-side semiconductor layer, and a second p-side semiconductor layer located on the second active layer. The second n-side semiconductor layer has a tunnel junction with the first p-side semiconductor layer. The first active layer includes a first well layer and a first barrier layer alternately arranged in a stacking direction. The second active layer includes a second well layer and a second barrier layer alternately arranged in the stacking direction. The second well layer is thinner than the first well layer. The second barrier layer is thicker than the first barrier layer.