发明公开
- 专利标题： SEMICONDUCTOR DEVICES
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申请号： US18115913申请日： 2023-03-01
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公开(公告)号： US20230207628A1公开(公告)日： 2023-06-29
- 发明人: Namkyu Edward CHO , Seung Soo HONG , Geum Jung SEONG , Seung Hun LEE , Jeong Yun LEE
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR 20180029753 2018.03.14
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L21/02 ; H01L29/06 ; H01L27/02 ; H01L21/8238 ; H01L21/311 ; H01L21/306 ; H01L29/165 ; H01L29/78 ; H01L27/092 ; H10B10/00
摘要：
A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.
公开/授权文献
- US12100735B2 Semiconductor devices 公开/授权日：2024-09-24
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