A quantum dot device and an electronic device. The quantum dot device includes a first electrode and an opposite facing second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, a first electron auxiliary layer proximate to the light emitting layer and disposed between the second electrode and the light emitting layer and including a first electron auxiliary material, a second electron auxiliary layer proximate to the second electrode and disposed between the second electrode and the light emitting layer and including a second electron auxiliary material, and an insertion layer disposed between the first electron auxiliary layer and the second electron auxiliary layer and including an inorganic material, wherein a HOMO energy level of the inorganic material is deeper than a HOMO energy level of the first electron auxiliary material, and a HOMO energy level of the second electron auxiliary material, respectively.