公开(公告)号：US20230209848A1

公开(公告)日：2023-06-29

申请号：US18057242

申请日：2022-11-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Hong Kyu SEO ,  Kwanghee KIM ,  Kunsu PARK ,  Eun Joo JANG ,  Hyo Sook JANG ,  You Jung CHUNG ,  Soonmin CHA

IPC分类号： H10K50/11 ,  H10K50/16 ,  H10K50/17

CPC分类号： H01L51/5004 ,  H01L51/508 ,  H01L51/5092 ,  H01L2251/303

摘要： A quantum dot device and an electronic device. The quantum dot device includes a first electrode and an opposite facing second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, a first electron auxiliary layer proximate to the light emitting layer and disposed between the second electrode and the light emitting layer and including a first electron auxiliary material, a second electron auxiliary layer proximate to the second electrode and disposed between the second electrode and the light emitting layer and including a second electron auxiliary material, and an insertion layer disposed between the first electron auxiliary layer and the second electron auxiliary layer and including an inorganic material, wherein a HOMO energy level of the inorganic material is deeper than a HOMO energy level of the first electron auxiliary material, and a HOMO energy level of the second electron auxiliary material, respectively.