ELECTROLUMINESCENT DEVICE AND SEMICONDUCTOR NANOPARTICLE

    公开(公告)号:US20230079704A1

    公开(公告)日:2023-03-16

    申请号:US17897609

    申请日:2022-08-29

    IPC分类号: C09K11/88 C01B19/00 H01L51/50

    摘要: A semiconductor nanoparticle, a production method thereof, and an electroluminescent device including the same. The production method includes: combining a magnesium precursor and an additive with a chalcogen precursor in a reaction medium including an organic solvent and an organic ligand; heating the reaction medium to a reaction temperature; and reacting the magnesium precursor and the chalcogen precursor in the presence of the additive to form a magnesium chalcogenide, wherein the semiconductor nanoparticle comprises the magnesium chalcogenide, wherein the magnesium chalcogenide comprises magnesium; and selenium, sulfur, or a combination thereof, and wherein the additive includes a hydride compound including an alkali metal, calcium, barium, aluminum, or a combination thereof.

    ELECTROLUMINESCENT DEVICE AND SEMICONDUCTOR NANOPARTICLE

    公开(公告)号:US20230074734A1

    公开(公告)日:2023-03-09

    申请号:US17895253

    申请日:2022-08-25

    摘要: An electroluminescent device includes a first electrode; a second electrode spaced apart from the first electrode; and a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer includes semiconductor nanoparticles, wherein the semiconductor nanoparticles do not include cadmium, the semiconductor nanoparticles have a core shell structure, the semiconductor nanoparticles include zinc, selenium, tellurium, and sulfur, wherein in a two dimensional image obtained by an electron microscopy analysis, the semiconductor nanoparticles show an average value of a circularity defined by the following equation of greater than or equal to about 0.8 and less than or equal to about 1: circularity = 4 ⁢ π × Area [ Perimeter ] 2 wherein Area is an area of a two dimensional image of an individual semiconductor nanoparticle, and Perimeter is a circumference of the two dimensional image of the individual semiconductor nanoparticle.

    QUANTUM DOT LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE

    公开(公告)号:US20210119161A1

    公开(公告)日:2021-04-22

    申请号:US17072436

    申请日:2020-10-16

    IPC分类号: H01L51/50

    摘要: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.