发明公开
- 专利标题: SEMICONDUCTOR DEVICE
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申请号: US18192322申请日: 2023-03-29
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公开(公告)号: US20230230920A1公开(公告)日: 2023-07-20
- 发明人: Dong Hyuk KIM , Sung Lae OH , Tae Sung PARK , Soo Nam JUNG
- 申请人: SK hynix Inc.
- 申请人地址: KR Icheon-si
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Icheon-si
- 优先权: KR 20200032053 2020.03.16
- 分案原申请号: US17079267 2020.10.23
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L23/522 ; H01L23/535 ; G11C7/18 ; H10B41/20 ; H10B41/41 ; H10B43/20 ; H10B43/40
摘要:
A semiconductor device includes a first connection pattern; a bit line disposed over the first connection pattern in a vertical direction; and a bit-line contact pad, disposed in a first layer between the bit line and the first connection pattern to electrically couple the bit line to the first connection pattern, and formed as an island when viewed along the vertical direction. A predetermined number of the bit-line contact pads are spaced apart from each other by a predetermined distance in a first direction, when viewed along the vertical direction.
公开/授权文献
- US12113018B2 Semiconductor device 公开/授权日:2024-10-08
信息查询
IPC分类: